View FGA40N60UFD_1240114.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGA40N60UFD
IGBT
FGA40N60UFD
Ultrafast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.
Features
* * * * High speed switching Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
TO-3P
GCE
E
TC = 25C unless otherwise noted
Absolute Maximum Ratings
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL
Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds
@ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C
FGA40N60UFD 600 20 40 20 160 15 160 160 64 -55 to +150 -55 to +150 300
Units V V A A A A A W W C C C
Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max. 0.77 1.7 40 Units C/W C/W C/W
(c)2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
FGA40N60UFD
Electrical Characteristics of the IGBT T
Symbol Parameter
C
= 25C unless otherwise noted
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA
On Characteristics
VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V 3.5 --5.1 2.3 3.1 6.5 3.0 -V V V
Dynamic Characteristics
Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1075 170 50 ---pF pF pF
Switching Characteristics
td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 30 65 35 470 130 600 30 37 110 80 500 310 810 77 20 25 14 --130 100 --1000 --200 250 --1200 150 30 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C
VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C
VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG
Electrical Characteristics of DIODE T
Symbol VFM trr Irr Qrr Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge
C
= 25C unless otherwise noted
Test Conditions TC = 25C IF = 15A TC = 100C TC = 25C TC = 100C IF = 15A, di/dt = 200A/us TC = 25C TC = 100C TC = 25C TC = 100C
Min. ---------
Typ. 1.4 1.3 50 74 4.5 6.5 80 220
Max. 1.7 -95 -6.0 -180 --
Units V ns A nC
(c)2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
FGA40N60UFD
160 Common Emitter Tc = 25 20V
80 70 Common Emitter V GE=15V Tc= 25 Tc= 125
Collector Current, I c (A)
120
Collector Current , Ic (A)
8
15V
60 50 40 30 20 10
80
12V
VGE = 10V 40
0 0 2 4 6
0 0.5 1 10
Collector-Emitter Voltage,VCE(V)
Collector-Emitter Voltage, V CE(V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Saturation Voltage
4
Common Emitter Vge=15V
30 Vcc = 300V Load Current : peak of square wave 25
Collector - Emitter Voltage, VCE [V]
3 40A
2
20A Ic=10A
Load Current [A]
20
15
10
1
5
0 0 30 60 90 120 150
Duty cycle : 50% Tc = 100 Powe Dissipation = 32W 0.1 1 10 100 1000
0
Case Temperature, T C []
Frequency [kHz]
Fig. 1 Fig3.Saturation Voltage vs. Case Temperature at Variant Current Level
Fig 4. Load Current vs. Frequency
20 Common Emitter TC = 25 16
20 Common Emitter TC = 125 16
[V]
CE
Collector - Emitter Voltage, V
12
Collector - Emitter Voltage, V
CE
[V]
12 8 40A 4 Ic=10A 0 20A 20
8 40A
4 IC = 10A 0 0 4 8
20A
12
16
0
4
8
12
16
20
Gate - Emitter Voltage, VGE [V]
Gate - Emitter Voltage, V GE [V]
Fig 5. Saturation Voltage vs. VGE
(c)2003 Fairchild Semiconductor Corporation
Fig 6. Saturation Voltage vs. VGE
FGA40N60UFD Rev. A
FGA40N60UFD
3000 Common Emitter VGE = 0V, f = 1MHz TC = 25 Cies
300 Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125
2500
Ton
Switching Time (ns)
Capacitance (pF)
2000 Coes 1500
100
Tr
1000 Cres 500
0 1 10 30
10 1 10 100 200
Collector-Emitter Voltage, VCE (V)
Gate Resistance, RG( )
Fig 7. Capacitance Characteristics
Fig 8. Turn-On Characteristics vs. Gate Resistance
1000 Common Emitter Vcc=300V,V GE= 15V Ic=20A Tc = 25 Tc = 125
2000
Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125
1000
Switching Time (ns)
Switching Time (uJ)
Toff
Eon
Eoff
100 Tf
100
Tf 20 1 10 100 200
50 1 10 100 200
Gate Resistance, RG( )
Gate Resistance, RG( )
Fig 9. Turn-Off Characteristics vs. Gate Resistance
Fig 10. Switching Loss vs. Gate Resistance
200
1000
100
Switching Time (ns)
Switching Time [nS]
Common Emitter VCC = 300V, VGE = 15V RG = 10 T C = 25 T C = 125
Toff 100 Toff Tf
Ton Common Emitter VCC = 300V, V GE = 15V R G = 10 T C = 25 T C = 125 15 20 25 30 35 40
10
Tr
Tf 20
10
10
15
20
25
30
35
40
Collector Current, Ic (A)
Collector Current, IC [A]
Fig 11. Turn-On Characteristics vs. Collector Current
(c)2003 Fairchild Semiconductor Corporation
Fig 12. Turn-Off Characteristics vs. Collector Current
FGA40N60UFD Rev. A
FGA40N60UFD
3000
15 Common Emitter RL=15 (Tc=25 ) 300V 9 200V Vcc=100V 6
Gate-Emitter Voltage, V GE (V)
1000
12
Switching Time (uJ)
Eon 100 Eoff Eoff Common Emitter VCC = 300V, VGE = 15V RG = 10 TC = 25 TC = 125 15 20 25 30 35 40
3
10 10
0 0 30 60 90 120
Collector Current , Ic (A)
Gate Charge, Qg (nC)
Fig 13. Switching Loss vs. Collector Current
Fig 14. Gate Charge Characteristics
500 IC MAX. (Pulsed) 100
500
100 100us 1
Collector Current, I C [A]
IC MAX. (Continuous) 10 DC Operation 1 Single Nonrepetitive Pulse TC = 25 Curves must be derated linearly with increase in temperature 0.3 1 10
Collector Current, IC [A]
50us
10
1
Safe Operating Area VGE =20V, T C=100 C 100 1000 0.1 1 10 100 1000
o
0.1
Collector-Emitter Voltage, VCE [V]
Collector-Emitter Voltage, VCE [V]
Fig 15. SOA Characteristics
Fig 16. Turn-Off SOA Characteristics
1 0.5
Thermal Response, Zthjc [/W]
0.2 0.1 0.1 0.05 0.02 0.01 0.01 single pulse
Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC
1E-3 10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Rectangular Pulse Duration [sec]
Fig 17. Transient Thermal Impedance of IGBT
(c)2003 Fairchild Semiconductor Corporation FGA40N60UFD Rev. A
FGA40N60UFD
100
T C = 25 T C = 100
100 VR = 200V IF = 15A T C = 25 T C = 100
Reverse Recovery Current, Irr [A]
0 1 2 3
Forward Current, I F [A]
10
10
1
1 100
1000
Forward Voltage Drop, VF [V]
di/dt [A/us]
Fig 18. Forward Characteristics
Fig 19. Reverse Recovery Current
800
120 V R = 200V IF = 15A T C = 25 T C = 100 VR = 200V IF = 15A TC = 25 TC = 100
Stored Recovery Charge, Qrr [nC]
600
Reverce Recovery Time, t rr [ns]
1000
100
80
400
60
200
40
0 100
20 100 1000
di/dt [A/us]
di/dt [A/us]
Fig 20. Stored Charge
Fig 21. Reverse Recovery Time
(c)2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
FGA40N60UFD
Package Dimensions
TO-3P
15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05
+0.15
12.76 0.20
19.90 0.20
16.50 0.30
3.00 0.20 1.00 0.20
3.50 0.20
2.00 0.20
13.90 0.20
23.40 0.20
18.70 0.20
1.40 0.20
5.45TYP [5.45 0.30]
5.45TYP [5.45 0.30]
0.60 -0.05
+0.15
(c)2003 Fairchild Semiconductor Corporation
FGA40N60UFD Rev. A
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM ActiveArrayTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM
FACTTM FACT Quiet seriesTM FAST(R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM
Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER
ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM
SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2003 Fairchild Semiconductor Corporation
Rev. I2

▲Up To Search▲

Price & Availability of FGA40N60UFD

	To Download FGA40N60UFD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .